CAS 19782-68-4|Tetrakis(dimethylamido)hafnium

Introduction:Basic information about CAS 19782-68-4|Tetrakis(dimethylamido)hafnium, including its chemical name, molecular formula, synonyms, physicochemical properties, and safety information, etc.
Common NameTetrakis(dimethylamido)hafnium
CAS Number19782-68-4Molecular Weight354.79300
Density1.098 g/mL at 25 °CBoiling Point6.1ºC at 760 mmHg
Molecular FormulaC8H24HfN4Melting Point26-29ºC(lit.)
MSDSChineseUSAFlash Point109 °F
Symbol
GHS02, GHS05
Signal WordDanger

Names

Nametetrakis(dimethylamido)hafnium(iv),
SynonymMore Synonyms

Chemical & Physical Properties

Density1.098 g/mL at 25 °C
Boiling Point6.1ºC at 760 mmHg
Melting Point26-29ºC(lit.)
Molecular FormulaC8H24HfN4
Molecular Weight354.79300
Flash Point109 °F
Exact Mass356.14700
PSA12.96000
LogP0.04920
Appearance of Characterscrystal | colorless to pale yellow
InChIKeyZYLGGWPMIDHSEZ-UHFFFAOYSA-N
SMILESC[N-]C.C[N-]C.C[N-]C.C[N-]C.[Hf+4]

Safety Information

Symbol
GHS02, GHS05
Signal WordDanger
Hazard StatementsH228-H261-H314
Supplemental HSReacts violently with water.
Precautionary StatementsP210-P231 + P232-P280-P305 + P351 + P338-P370 + P378-P402 + P404
Personal Protective EquipmentEyeshields;Faceshields;full-face particle respirator type N100 (US);Gloves;respirator cartridge type N100 (US);type P1 (EN143) respirator filter;type P3 (EN 143) respirator cartridges
Hazard CodesF: Flammable;C: Corrosive;
Risk PhrasesR11
Safety Phrases6-26-36/37/39-43-45
RIDADRUN 3396 4
WGK Germany3

Articles4

More Articles

Appl. Phys. Lett. 91 , 193503, (2007)

Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films Hausmann DM, Gordon RG

J. Cryst. Growth 249 , 251-261, (2003)

The Savannah ALD System - An Excellent Tool for Atomic Layer Deposition Monsma D, Becker J

Material Matters 1(3) , 5, (2006)

Synonyms

MFCD01862473
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