CAS 12033-89-5|Silicon nitride
| Common Name | Silicon nitride | ||
|---|---|---|---|
| CAS Number | 12033-89-5 | Molecular Weight | 140.283 |
| Density | 2.8±0.1 g/cm3 | Boiling Point | / |
| Molecular Formula | N4Si3 | Melting Point | 1900 °C |
| MSDS | ChineseUSA | Flash Point | / |
Names
| Name | Silicon Nitride |
|---|---|
| Synonym | More Synonyms |
Chemical & Physical Properties
| Density | 2.8±0.1 g/cm3 |
|---|---|
| Melting Point | 1900 °C |
| Molecular Formula | N4Si3 |
| Molecular Weight | 140.283 |
| Exact Mass | 139.943069 |
| PSA | 12.96000 |
| Index of Refraction | 2.501 |
| InChIKey | HQVNEWCFYHHQES-UHFFFAOYSA-N |
| SMILES | N12[Si]34N5[Si]16N3[Si]25N46 |
| Stability | Stable. |
Safety Information
| Personal Protective Equipment | dust mask type N95 (US);Eyeshields;Gloves |
|---|---|
| Hazard Codes | Xi |
| Risk Phrases | R37:Irritating to the respiratory system. |
| Safety Phrases | S22-S24/25 |
| RIDADR | NONH for all modes of transport |
| WGK Germany | 3 |
Articles31
More Articles| K(+) , Na(+) , and Mg(2+) on DNA translocation in silicon nitride nanopores. Electrophoresis 33(23) , 3448-57, (2012) In this work, we report on how salt concentration and cation species affect DNA translocation in voltage-biased silicon nitride nanopores. The translocation of dsDNA in linear, circular, and supercoil... | |
| Fabrication and characterization of nanopores with insulated transverse nanoelectrodes for DNA sensing in salt solution. Electrophoresis 33(23) , 3488-96, (2012) We report on the fabrication, simulation, and characterization of insulated nanoelectrodes aligned with nanopores in low-capacitance silicon nitride membrane chips. We are exploring these devices for ... | |
| Quantitative probing of surface charges at dielectric-electrolyte interfaces. Lab Chip 13(7) , 1431-6, (2013) The intrinsic charging status at the dielectric-electrolyte interface (DEI) plays a critical role for electrofluidic gating in microfluidics and nanofluidics, which offers opportunities for integratio... |
Synonyms
| Hexacyclo[3.1.1.0.0.0.0]trisilazane |
| EINECS 234-796-8 |
| Silicon nitride |
| MFCD00011230 |
| Trisilicon tetranitride |
