CAS 22398-80-7|Indium phosphide (InP)
Introduction：Basic information about CAS 22398-80-7|Indium phosphide (InP), including its chemical name, molecular formula, synonyms, physicochemical properties, and safety information, etc.
| Common Name | Indium phosphide (InP) | ||
|---|---|---|---|
| CAS Number | 22398-80-7 | Molecular Weight | 147.80800 |
| Density | 4,787 g/cm3 | Boiling Point | / |
| Molecular Formula | H2InP | Melting Point | 1070°C |
| MSDS | ChineseUSA | Flash Point | / |
| Symbol | GHS08 | Signal Word | Danger |
Names
| Name | indium phosphide |
|---|---|
| Synonym | More Synonyms |
Chemical & Physical Properties
| Density | 4,787 g/cm3 |
|---|---|
| Melting Point | 1070°C |
| Molecular Formula | H2InP |
| Molecular Weight | 147.80800 |
| Exact Mass | 147.89300 |
| LogP | 0.32580 |
| Appearance of Characters | pieces |
| InChIKey | GPXJNWSHGFTCBW-UHFFFAOYSA-N |
| SMILES | P#[In] |
Toxicological Information
CHEMICAL IDENTIFICATION |
Safety Information
| Symbol | GHS08 |
|---|---|
| Signal Word | Danger |
| Hazard Statements | H350-H361f-H372 |
| Precautionary Statements | P201-P281-P308 + P313 |
| Target Organs | Lungs |
| Hazard Codes | T |
| Safety Phrases | S24/25 |
| RIDADR | 3288 |
| WGK Germany | 3 |
| RTECS | NL1800000 |
Articles25
More Articles| InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy. Opt. Express 20(17) , 19279-88, (2012) We report the first InGaAsP-based uni-travelling carrier photodiode structure grown by Solid Source Molecular Beam Epitaxy; the material contains layers of InGaAsP as thick as 300 nm and a 120 nm thic... | |
| Structural and optical investigation of GaInP quantum dots according to the growth thickness for the 700 nm light emitters. J. Nanosci. Nanotechnol. 13(1) , 564-7, (2013) We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3... | |
| Stretchable semiconductor technologies with high areal coverages and strain-limiting behavior: demonstration in high-efficiency dual-junction GaInP/GaAs photovoltaics. Small 8(12) , 1851-6, (2012) Notched islands on a thin elastomeric substrate serve as a platform for dual-junction GaInP/GaAs solar cells with microscale dimensions and ultrathin forms for stretchable photovoltaic modules. These ... |
Synonyms
| MFCD00016153 |
| polycrystallinelump |
| INDIUM(III) PHOSPHIDE |
| Indium phosphide (InP) |
| EINECS 244-959-5 |
| Phosphinidyneindium(III) |
| InP |
| indiummonophosphide |
| Indiumphsophidewafer |
| Indium phosphide wafer |
