4,4',4''-Tris(N-3-methylphenyl-N-phenylamino)triphenylamine CAS 124729-98-2

Introduction：Basic information about 4,4',4''-Tris(N-3-methylphenyl-N-phenylamino)triphenylamine CAS 124729-98-2, including its chemical name, molecular formula, synonyms, physicochemical properties, and safety information, etc.

4,4',4''-Tris(N-3-methylphenyl-N-phenylamino)triphenylamine Basic information

• Product Name: 4,4',4''-Tris(N-3-methylphenyl-N-phenylamino)triphenylamine
• Synonyms: MTDATA;4,4',4''-TRIS(N-3-METHYLPHENYL-N-PHENYL-AMINO)-TRIPHENYLAMINE;4,4',4'-TRIS(N-3-METHYLPHENYL-N-PHENYL-AMINO)-TRIPHENYLAMINE M-MTDATA;SUBLI;M-MTDATA;4,4',4''-Tris(N-3-me;M-MTDATA,4,4',4''-Tris(N-3-Methylphenyl-N-phenylaMino)triphenyla;4,4',4''-Tris[phenyl(M-tolyl)aMino]triphenylaMine
• CAS: 124729-98-2
• MF: C57H48N4
• MW: 789.02
• EINECS: 631-370-7
• Product Categories: OLED;oled materials;electronic;OLED-sublimed
• Mol File: 124729-98-2.mol

4,4',4''-Tris(N-3-methylphenyl-N-phenylamino)triphenylamine Chemical Properties

• Melting point: 203-207°C
• density: 1.190±0.06 g/cm3(Predicted)
• storage temp.: 2-8°C
• pka: -1.07±0.60(Predicted)
• form: powder
• color: White to Yellow
• InChIKey: DIVZFUBWFAOMCW-UHFFFAOYSA-N
• SMILES: C1(N(C2=CC=CC(C)=C2)C2=CC=CC=C2)=CC=C(N(C2=CC=C(N(C3=CC=CC(C)=C3)C3=CC=CC=C3)C=C2)C2=CC=C(N(C3=CC=CC(C)=C3)C3=CC=CC=C3)C=C2)C=C1
• Absorption: λmax?312 nm, 342 nm in THF

Safety Information

• Hazard Codes: Xi
• Risk Statements: 36/37/38
• Safety Statements: 26-36
• WGK Germany: 3
• HS Code: 29214200
• Storage Class: 11 - Combustible Solids
• Hazard Classifications: Eye Irrit. 2 Skin Irrit. 2 STOT SE 3

4,4',4''-Tris(N-3-methylphenyl-N-phenylamino)triphenylamine Usage And Synthesis

Applications

With its very low solid-state ionisation potential and good-quality amorphous film, 4,4',4''-Tris[phenyl(m-tolyl)amino]triphenylamine, m-MTDATA acts as an effective material for the hole-injection buffer layer (HIL) that facilitates hole injection from the ITO electrode to the hole transporting layer (HTL). This potentially lowers the driving voltage of the OLED devices. F4-TCNQ, a strong electron acceptor, is always used together with m-MTDATA as a p-doping material to improve the conductivity of the HTL buffering layer. Typical structure of the device (or part of the device) is ITO/p-doped m-MTDATA/HTL/etc.

Description

With its very low solid-state ionisation potential and good-quality amorphous film, 4,4',4''-Tris[phenyl(m-tolyl)amino]triphenylamine, m-MTDATA acts as an effective material for the hole-injection buffer layer (HIL) that facilitates hole injection from the ITO electrode to the hole transporting layer (HTL). This potentially lowers the driving voltage of the OLED devices.

Uses

Hole-transporting layer and Hole Injection layer material for High-Performance OLEDs.